AN2156 Freescale Semiconductor / Motorola, AN2156 Datasheet - Page 13

• Manufacturer Part Number: AN2156
• Description: Programming and Erasing FLASH and EEPROM Memories on the MC68HC908AS60A/AZ60A
• Manufacturer: Freescale Semiconductor / Motorola

FLASH Page Erase Algorithm
AN2156
MOTOROLA
NOTE:
Each FLASH array has separate FLASH control and block protect
registers. Make sure to set the bits in the appropriate register.
10. Wait for a time, t
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register (FLxBPR).
3. Write to any FLASH address within the address range to be
4. Wait for a time, t
5. Set the HVEN bit.
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This is the time required for internal high voltage to discharge from
the array.
Disable the internal high voltage.
After a time, t
mode.
register (FLxCR).
ERASE = 1 configures the FLASH memory for an erase operation.
MASS = 0 sets the PAGE erase operation.
The block protect register must be read before high voltage can be
enabled. If the desired address set in step 3 is in a protected block,
erase will fail.
erased. For page erase, this is any address within that 128-byte
block.
The address is used to determine the address range that will be
erased.
Internal high voltage is charged.
Internal high voltage is applied to the page.
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RCV
NVHL
RCV
NVS
, the memory can be accessed in normal read
.
.
.
FLASH Page Erase Algorithm
Application Note
13