GT3585 GTM, GT3585 Datasheet - Page 2

• Manufacturer Part Number: GT3585
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM

N-Channel Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
GT3585
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
Parameter
Parameter
2
2
2
2
copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
:
:
2
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
R
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
g
r
f
rr
rr
/
Tj
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
230
0.7
1.1
10
55
40
16
7
4
2
6
8
3
-
-
-
-
-
-
-
8
-
Max.
±100
Max.
125
370
:
1.2
1.7
1.2
10
75
1
7
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=3A
=1A
=1.2A, V
=3A, V
=15
=3.3
=0, I
=V
=5V, I
= ±12V
=20V, V
=16V, V
=4.5V, I
=2.5V, I
=16V
=4.5V
=15V
=5V
=0V
=20V
Test Conditions
Test Conditions
ISSUED DATE :2006/02/16
REVISED DATE :
GS
D
GS
, I
D
=250uA
GS
=3A
D
=0V
D
D
GS
GS
=250uA
=3.5A
=1.2A
=0V
=0
=0
:
Page: 2/7
D
=1mA