GT3585 GTM, GT3585 Datasheet
GT3585
Related parts for GT3585
GT3585 Summary of contents
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... N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant ...
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... Output Capacitance Reverse Transfer Capacitance Gate Resistance Source-Drain Diode Parameter 2 Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2 Surface mounted GT3585 Symbol Min. Typ DSS - 0. DSS 0 ...
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... Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2 Surface mounted GT3585 Symbol Min. Typ. - DSS - -0. DSS ...
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... Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT3585 ISSUED DATE :2006/02/16 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ...
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... N-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics GT3585 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ISSUED DATE :2006/02/16 REVISED DATE : 180 /W Page: 5/7 ...
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... P-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT3585 ISSUED DATE :2006/02/16 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/7 ...
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... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT3585 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ...