GT60M322 Toshiba, GT60M322 Datasheet - Page 4

• Manufacturer Part Number: GT60M322
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

1000
200
160
120
100
0.1
0.1
80
40
10
10
0
1
1
0
1
1
I C max
(continuous)
* Single
non-repetitive
pulse Tc = 25°C
Curves must be
derated linearly
with increase in
temperature.
Common emitter
V CC = 600 V
I C = 60 A
V GG =
Tc = 25°C
I C max (pulsed)*
50
operation
DC
Collector- emitter voltage V CE (V)
±
t off
t on
V CE = 150 V
100 150
15 V
t r
t f
Gate resistance R G (
Gate charge Q G
10
Switching Time – R
Safe Operating Area
10
V
50 V
CE
200 250 300 350
10 ms
100 V
, V
*
GE
1 ms*
100
– Q
100 µs*
100
G
(nC)
G
Ω
Common
emitter
R L = 2.5 Ω
Tc = 25°C
)
400
10 µs*
1000
450
1000
3000
500
20
16
12
8
4
0
4
100000
10000
1000
1000
0.01
100
100
0.1
0.1
10
10
1
1
1
0
1
t off
t on
t r
t f
10
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
10
Collector current I C (A)
20
10
Switching Time – I
Reverse Bias SOA
30
C – V
C res
100
C ies
CE
100
40
C oes
C
Common emitter
V CC = 600 V
R G = 30
V GG =
Tc = 25°C
50
1000
T j < = 125°C
V GG = 20 V
R G = 10 Ω
Common
emitter
V GE = 0
f = 1 MHz
Tc = 25°C
±
1000
GT60M322
Ω
15 V
60
2004-07-06
10000
3000
70