GT60M322 Toshiba, GT60M322 Datasheet - Page 3

• Manufacturer Part Number: GT60M322
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

120
100
100
80
60
40
20
10
80
60
40
20
0
8
6
4
2
0
0
0
0
0
Common
emitter
V CE = 5 V
Collector-emitter voltage V CE (V)
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
5
T C = 125°C
4
30
V
10
2
I
I
CE
C
25
C
20
80
– V
– V
60
– V
8
CE
15
GE
GE
15
3
I C = 10 A
−40
12
Common
emitter
Tc = 25°C
Common
emitter
Tc = 25°C
V GE = 9 V
20
4
10
25
16
5
3
10
10
−40
8
6
4
2
0
8
6
4
2
0
4
3
2
1
0
0
0
Common
emitter
V GE = 15 V
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
5
5
0
Case temperature Tc (°C)
30
30
V
V
10
V
10
40
CE (sat)
CE
CE
80
80
60
– V
– V
60
GE
GE
– Tc
15
15
80
I C = 10 A
I C = 10 A
Common
emitter
Tc = -40°C
Common
emitter
Tc = 125°C
120
20
20
GT60M322
I C = 10 A
2004-07-06
80
60
30
160
25
25