TIG111GMH Sanyo Semicon Device, TIG111GMH Datasheet - Page 3

• Manufacturer Part Number: TIG111GMH
• Description: N-Channel Non Punch Through IGBT
• Manufacturer: Sanyo Semicon Device

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50
40
30
20
10
50
40
30
20
10
0
0
5
4
3
2
1
0
5
4
3
2
1
0
0
0
5
5
Tj=125 ° C
0.5
0.5
Collector-to-Emitter Voltage, V CE -- V
Collector-to-Emitter Voltage, V CE -- V
Gate-to-Emitter Voltage, V GE -- V
Gate-to-Emitter Voltage, V GE -- V
7
7
1.0
1.0
V CE -- V GE
V CE -- V GE
1.5
1.5
I C -- V CE
I C -- V CE
9
9
2.0
2.0
11
11
2.5
2.5
3.0
3.0
13
13
Tj= --40 ° C
Tj= --40 ° C
Tj=125 ° C
3.5
3.5
IT16403
IT16401
IT16405
IT16407
TIG111GMH
4.0
4.0
15
15
10000
1000
100
10
50
40
30
20
10
50
40
30
20
10
0
0
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
Gate-to-Emitter Threshold Voltage, V GE (off) -- V
1.0
Gate-to-Emitter Threshold Voltage, V GE (off) -- V
0
3
5
V CE =10V
V CC =300V
VClamp=600V
L=200μH
V GE =15V
I C =10A
2
0.5
4
3
7
Gate-to-Emitter Voltage, V GE -- V
5 7
1.0
t off , t d (off), t f -- R G
Gate Resistance, R G -- Ω
5
10
I C -- V GE (off)
V CE -- V GE
1.5
I C -- V CE
9
6
2
2.0
3
5 7
7
11
2.5
100
8
3.0
2
13
3
Tj=25 ° C
Tj=25 ° C
No.9014-3/5
9
3.5
IT16402
IT16404
IT16406
5 7
IT16408
1000
4.0
10
15
Datasheet pdf - http://www.DataSheet4U.net/