TIG111GMH Sanyo Semicon Device, TIG111GMH Datasheet

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... The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7504-003 3.4 16.0 2.8 2.0 0 5.45 5.45 TIG111GMH SANYO Semiconductors N-Channel Non Punch Through IGBT High Power High Speed Switching Applications Symbol Conditions V CES V GES Limited by Tjmax Limited by Tjmax I CP ...

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... Qg Qgs V CE =300V =15V =10A Qgd Symbol Conditions Rth(j-c) Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Rth(j- Diode TIG111GMH V CLAMP =600V V GE 90% 10 90% 10% 10 (off) t off Ratings min typ max 600 ± ...

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... Collector-to-Emitter Voltage Gate-to-Emitter Voltage Gate-to-Emitter Voltage TIG111GMH Tj= --40 ° C 2.0 2.5 3.0 3.5 4.0 IT16401 2.0 2.5 3.0 3.5 4.0 IT16403 Tj= --40 ° IT16405 10000 Tj=125 ° C 1000 11 13 ...

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... Total Gate Charge Case Temperature ° C TIG111GMH 1000 V CC =300V VClamp=600V L=200μ =15V R G =30Ω 100 IT16409 10000 V CC =300V VClamp=600V L=200μ =15V 1000 R G =30Ω ...

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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2011. Specifi cations and information herein are subject to change without notice. TIG111GMH ...