www.DataSheet4U.com
Ordering number : ENN7397
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note : TIG004SS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
•
•
•
•
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in Gate-to-Emitter protection diode.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)CES
V CE (sat)1
V CE (sat)2
V GE (off)
Symbol
Symbol
V CES
V GES
V GES
I GES
I CES
Coes
Cres
Cies
Tstg
I CP
Tch
Light-Controlling Strobe Applications
PW 500 s, duty cycle 0.5%
I C =5mA, V GE =0
V CE =320V, V GE =0
V GE = 6V, V CE =0
V CE =10V, I C =1mA
I C =150A, V GE =4V
I C =60A, V GE =2.5V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
TIG004SS
Conditions
Package Dimensions
unit : mm
2203
0.595
Conditions
8
1
1.27
5.0
0.43
4
5
[TIG004SS]
min
400
0.5
22004 TS IM TA-3794
Ratings
typ
Ratings
3300
TIG004SS
4.2
2.4
75
40
0.2
N-Channel IGBT
--40 to +150
max
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
400
150
150
1.2
5.5
3.4
10
10
6
8
No.7397-1/3
Unit
Unit
pF
pF
pF
V
V
V
A
V
V
V
V
C
C
A
A