BTA08-200 Sirectifier Semiconductors, BTA08-200 Datasheet - Page 4

• Manufacturer Part Number: BTA08-200
• Description: Discrete Triacs Non-isolated/isolated
• Manufacturer: Sirectifier Semiconductors

1000
100
F ig.
current for a
tp < 10ms, a nd corres ponding value of I²t.
F ig.
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 m).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
F ig.
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
90
80
70
60
50
40
30
20
10
10
0
0.01
0.1
0
R th(j-a) (°C /W)
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
IT S M (A ),I² t (A ² s )
B
1 0 : DPAK and D
D²PAK
:
8 -2: R elative variation of critical rate of
4
C
6
Non-repetitive s urge peak on-s tate
dI/dt limitation:
8
50A /µs
DPAK
12
0.10
1.0
s inus oida l puls e
(dV /dt)c (V /µs )
16
Discrete Triacs(Non-Isolated/Isolated)
tp (ms )
S (c m² )
2
PAK T hermal resis tance
20
24
1.00
10.0
28
BTB/BTA08
with width
32
T j initial=25°C
IT S M
I²t
36
10.00
100.0
40
2.5
2.0
1.5
1.0
0.5
0.0
F ig. 7 : R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
6
5
4
3
2
1
0
F ig.
decreas e
temperature.
-40
0
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ]
IH & IL
-20
9 : R elative varia tion of critical rate of
IG T
25
0
of main
20
50
T j(°C )
40
T j(°C )
current vers us
60
75
80
100
100
120
junction
140
125