BTA08-200 Sirectifier Semiconductors, BTA08-200 Datasheet

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BTA08-200

Manufacturer Part Number
BTA08-200
Description
Discrete Triacs Non-isolated/isolated
Manufacturer
Sirectifier Semiconductors
Datasheet
1.BTA08-200.pdf (5 pages)
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
(dI/dt)c (2) Without snubber
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
dV/dt (2)
Symbol
I
Symbol
I
GT
P
I
T(RMS)
V
V
H
I
dI/dt
G(AV)
T
I
TSM
I
GD
GT
GM
L
I
T
(2)
stg
²
(1)
t
j
V
V
I
I
V
G
T
G
D
D
D
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
²
G
= 100 mA
= 1.2 I
t Value for fusing
= 12 V
= V
= 67 % V
= 2 x I
DRM
T2
T1
GT
GT
Test Conditions
R
DRM
, tr < 100 ns
Discrete Triacs(Non-Isolated/Isolated)
L
R
= 3.3 k
L
_
T1
= 30
T2
gate open Tj = 125°C
G
Tj = 125°C
Tj = 125°C
BTB/BTA08
Parameter
Dimensions TO-220AB
Quadrant
I - II - III
I - II - III
I - II - III
I - III
II
F = 120 Hz
TO-220AB
tp = 20 µs
F = 60 Hz
F = 50 Hz
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
tp = 10 ms
Tc = 110°C
t = 16.7 ms
Tj = 125°C
Tj = 125°C
Tj = 125°C
t = 20 ms
Dim.
400
CW
4.5
M
A
B
C
D
E
G
H
K
N
Q
R
F
35
35
50
60
J
0.100
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.025
0.170
0.045
0.014
0.110
0.090
BTA/BTB
Min.
Inches
1.3
0.2
- 40 to + 150
- 40 to + 125
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
0.190
0.055
0.022
0.110
Max.
BSC
Value
1000
8
50
BW
84
80
36
50
80
4
1
50
70
7
12.70
14.73
Min.
2.54
9.91
3.54
5.85
2.54
1.15
2.79
0.64
4.32
1.14
0.35
2.29
Milimeter
13.97
16.00
10.66
Max.
BSC
4.08
6.85
3.18
1.65
5.84
1.01
4.82
1.39
0.56
2.79
Unit
A/µs
A/ms
Unit
V/µs
A
°C
mA
mA
mA
W
A
A
A
V
V
²
s

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BTA08-200 Summary of contents

Page 1

... I = 100 1 dV/dt ( gate open Tj = 125°C D DRM (dI/dt)c (2) Without snubber BTB/BTA08 Dimensions TO-220AB Parameter TO-220AB 120 µs Quadrant III MAX III MAX 125° III MIN. MAX. ...

Page 2

... MIN 125°C MIN. Test Conditions Tj = 25° 125° 125° 25° 125°C Parameter Voltage (xxx) Sensitivity ~~ 200 V 1000 Marking Weight 2.3 g BTB/BTA08 Value Unit 50 mA 100 1 100 V/µs 400 10 V/µs Value Unit MAX ...

Page 3

... O n-s tate chara cteris tics values ). 100 T j=T j max T j max 0. j=25° M 0.5 1.0 1.5 2.0 2.5 3.0 3.5 BTB/BTA08 F ig. 2- on-s tate current vers us cas e temperature (full cycle ig ela tive variation of thermal impedance vers us puls e duration ...

Page 4

... D²PAK m² BTB/BTA08 F ig elative va riation of gate trigger current, with width holding current and la tching current versus junction temperature (typical va lues ). IG T,IH, ,IH,IL [T j=25° initial=25°C 2 1.5 IH & IL 1.0 I²t ...

Page 5

... T j(° BTB/BTA08 F ig elative va riation of gate trigger current, with width holding current and la tching current versus junction temperature (typical va lues ). IG T,IH, T,IH,IL [T j=25° 2 initial=25° 1.5 IH & IL 1.0 I² ...

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