AN1944 Freescale Semiconductor / Motorola, AN1944 Datasheet - Page 6

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AN1944

Manufacturer Part Number
AN1944
Description
Generating Temperature-Dependent IV Curves Using ADS
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
CONCLUSION
constructing an accurate I–V–T behavior for any of Motorola’s
modeled LDMOS devices. With this data, a good first–order
approximation of the device’s ∆V versus temperature (at
constant I
compensation circuit similar to the one shown in Figure 7.
parameter sweep of temperature of any device in Motorola’s
AN1944
4
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E Motorola, Inc. 2002.
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This application note shows a step–by–step method for
Figure 7 is an example of a simple DC simulation with a
DQ
) will aid in the design of a temperature
V
BIAS
Freescale Semiconductor, Inc.
R2
R1
C1
For More Information On This Product,
8
LP2951
Figure 7. Bias Circuit Schematic
4
Go to: www.freescale.com
BC847
1
2
MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION
R3
LDMOS Model Library that will yield useful IV–T data. This
data can then be used to generate a plot similar to the one in
Figure 5. This data is useful in first revision designs of
temperature compensation circuits. Refer to AN1643, “RF
LDMOS Power Modules for GSM Base Station Application:
Optimum Biasing Circuit,” for more details on temperature
compensation design.
R4
1: Output
2: Sense
4: Ground
8: Input
R5
R6
C2
R7
C3
C4
R8
V
GATE
AN1944/D

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