AN1944 Freescale Semiconductor / Motorola, AN1944 Datasheet

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AN1944

Manufacturer Part Number
AN1944
Description
Generating Temperature-Dependent IV Curves Using ADS
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR APPLICATION NOTE
Generating Temperature-Dependent IV Curves
Using ADS
Prepared by: Darin Wagner
INTRODUCTION
generating temperature–dependent IV curves using data
exported from the Agilent Eesof EDA Advanced Design
System (ADS). Temperature–dependent IV curves are
measured for the MRF9080 and compared to the
simulated data of the MRF9080 Motorola Electro Thermal
(MET) model.
CURRENT PROBE VERSUS TEMPERATURE AND
GATE VOLTAGE
SIMULATION SETUP
includes current probe (I
NOTE: For better viewing on the Web, click on link for larger version of graphic.
REV 0
This application note outlines a basic procedure for
In the following simulation, a data set is generated that
Motorola, Inc. 2002
Motorola Semiconductor Products Sector
DS
) as the dependent variable and
Figure 1. Basic Block Diagram of the MRF9080 Setup Simulation
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
gate voltage (V
variables.
• Variables are defined as I
• The DUT is terminated with 50 Ω termination ports.
• DC blocking caps with values appropriate for the band of
• Parameter Sweep is set up with the variable V
• DC1 calls on a separate simulation named Sweep1, which
operation are used.
as the global sweep variable.
then sweeps T
GS
SNK
) and temperature (T) as the independent
.
DS
, V
GS
, V
DS
Order this document
AN1944
and T
by AN1944/D
SNK
GS
.
defined

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AN1944 Summary of contents

Page 1

... DC blocking caps with values appropriate for the band of operation are used. • Parameter Sweep is set up with the variable V as the global sweep variable. • DC1 calls on a separate simulation named Sweep1, which then sweeps T SNK Go to: www.freescale.com Order this document by AN1944/D AN1944 , and ...

Page 2

... Freescale Semiconductor, Inc. AN1944 The actual ADS schematic should resemble Figure 2. The choice of independent variable to use for the global sweep variable is irrelevant and is at the user’s discretion. There is no NOTE: For better viewing on the Web, click on link for larger version of graphic. ...

Page 3

... IV–Temperature behavior from 600 mA to 3000 mA. At higher quiescent currents, the 100 correlation is not as strong. When designing temperature compensation circuits recommended that a circuit similar to that shown in Figure 7 should be used. Go to: www.freescale.com AN1944 the temperature DQ GS did diss . (device ...

Page 4

Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com ...

Page 5

Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com ...

Page 6

... LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit,” for more details on temperature compensation design LP2951 Output 2: Sense BC847 4: Ground 8: Input Figure 7. Bias Circuit Schematic MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION Go to: www.freescale.com R8 V GATE C3 C4 AN1944/D ...

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