AN1602 Freescale Semiconductor / Motorola, AN1602 Datasheet - Page 13

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AN1602

Manufacturer Part Number
AN1602
Description
AN1602 Application Note: Dual-Band PA Application w/DECT Capability Using Std RFICs
Manufacturer
Freescale Semiconductor / Motorola
Datasheet

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ANNEX
MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION
Table 3. Minimum and Typical Performances for GSM Path at 4.8 V
ELECTRICAL CHARACTERISTICS
Period, T
Table 4. Minimum and Typical Performances for DCS Path at 4.8 V
ELECTRICAL CHARACTERISTICS
T
Frequency Range
Output Power
Power Added Efficiency
Input VSWR
Harmonic Output
Negative Supply Current
Output Power at Low Voltage (V
Output Power, Isolation (V
3 dB V
Noise Power in 100 kHz, 925 to 935 MHz
Frequency Range
V
V
I
Output Power at (GSM Pulse)
Output Power at (GSM Pulse; Low Voltage: V
Power Added Efficiency
Input Return Loss
Harmonic Output
Output Noise Power (P
A
SS
DD
SS
= 25 C unless otherwise noted)
2nd f
3rd f
2nd f
3rd f
o
DD
o
o
o
A
= 25 C unless otherwise noted)
Bandwidth (V
out
D1
, V
Nominal; 100 kHz Bandwidth; 20 MHz above f
D1
D2
, V
= 0 to 6 V)
D2
D1
Characteristic
Characteristic
, V
= 0 V)
Freescale Semiconductor, Inc.
D2
For More Information On This Product,
= 4.0 V)
(V
(V
D1
D1
DD
,
, V
2, 3
= 4.0 V)
D2
= 4.8 V, P
Go to: www.freescale.com
= 4.8 V, V
in
SS
= 3 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms Period,
= –4 V, P
o
)
in
= 10 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
1710
34.5
33.3
31.5
Min
880
Min
1.0
48
33
35
33.5
–4.0
Typ
–20
Typ
2:1
4.8
35
40
1785
Max
1.25
Max
915
–30
–35
–15
–90
–12
–30
–30
–80
2.0
VSWR
Unit
MHz
dBm
dBm
dBm
MHz
dBm
Unit
MHz
dBm
dBm
dBm
dBc
dBc
mA
mA
dB
%
%
V
V
13

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