AN1602 Freescale Semiconductor / Motorola, AN1602 Datasheet
AN1602
Available stocks
Related parts for AN1602
AN1602 Summary of contents
Page 1
... ON–state for the selected path and the drive levels for an optional RF power switch. Together, these components form a complete system solution for a dual band power amplifier function. A block diagram of the application circuit is shown in Figure 1. Go to: www.freescale.com Order this document by AN1602/D ...
Page 2
Freescale Semiconductor, Inc. MC33169 FUNCTIONALITY The MC33169 integrated circuit provides negative voltage generation and regulation, direct drive of the N–channel drain switch transistor, a complete priority management system, and other possible facilities which are very useful for battery–operated designs ranging ...
Page 3
Freescale Semiconductor, Inc. Figure 3. Component Placement for 3.6 V Application Figure 3a. Application Board for Dual Band PA at 3.6 V using MRFIC0917 and MRFIC1817 MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION For More Information On This Product, Go to: www.freescale.com 3 ...
Page 4
Freescale Semiconductor, Inc. Ó Ó Ó Ó Ó Ó 4 For More Information On This Product, Ó Ó Ó MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION Go to: www.freescale.com Ó Ó ...
Page 5
Freescale Semiconductor, Inc. BOARD DESCRIPTION DC and Control Section The demonstration board layout and component placement for 3.6 V application is shown in Figure 3 and the placement for the 4.8 V board is shown in Figure 17. Input pins ...
Page 6
Freescale Semiconductor, Inc. Figure 5. Gain (1), Isolation (2) and Return Loss for GSM Path at 3.6 V Table 1. Minimum and Typical Performances for GSM Path at 3.6 V ELECTRICAL CHARACTERISTICS ( unless otherwise ...
Page 7
Freescale Semiconductor, Inc. Figure 6. Gain (1), Isolation (2) and Return Loss for DCS1800 Path at 3.6 V Table 2. Minimum and Typical Performances for DCS Path at 3.6 V ELECTRICAL CHARACTERISTICS (V D1 ...
Page 8
Freescale Semiconductor, Inc. Figure 7. Rise Time for GSM Path at 3.6 V within 30 dB Dynamic Range Figure 9. Rise Time for DCS1800 Path at 3.6 V within 30 dB Dynamic Range Figure 11. Spurious Spectrum for GSM Path ...
Page 9
Freescale Semiconductor, Inc. Figure 13. Output RF Voltage Variation with Linear Control Ramp at 3.6 V DECT The DCS path can also be evaluated in the DECT band. In that case the quiescent current of the DCS PA needs to ...
Page 10
Freescale Semiconductor, Inc. Figure 17. Component Placement for 4.8 V Application 10 For More Information On This Product, MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION Go to: www.freescale.com ...
Page 11
Freescale Semiconductor, Inc. Ó Ó Ó MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION For More Information On This Product, Ó Ó Ó Ó Go to: www.freescale.com Ó Ó Ó Ó 11 ...
Page 12
Freescale Semiconductor, Inc. Figure 19. Gain and Return Loss for GSM Path at 4.8 V CONCLUSION This demonstration board allows the user to evaluate a GSM/DCS1800 solution for dual band radios or dual band car antenna amplifiers with standard products ...
Page 13
Freescale Semiconductor, Inc. ANNEX Table 3. Minimum and Typical Performances for GSM Path at 4.8 V ELECTRICAL CHARACTERISTICS (V Period unless otherwise noted) A Characteristic Frequency Range Output Power Power Added Efficiency Input VSWR Harmonic Output ...
Page 14
Freescale Semiconductor, Inc. Table 5. Bill of Material for Dual Band Solution at 3.6 V Ref Description C2 Capacitor 0603 C3 Capacitor 0603 C4 Capacitor 0603 C5 Capacitor 0603 C6 Capacitor 0603 AVX C7 Capacitor 0603 AVX C8 Capacitor 0603 ...
Page 15
Freescale Semiconductor, Inc. Table 5. Bill of Material for Dual Band Solution at 3.6 V (continued) Ref Description R11 Resistor 0603 R12 Resistor 0603 R13 Resistor 0603 R14 Resistor 0603 R15 Resistor 0603 R16 Resistor 0603 R17 Resistor 0603 R18 ...
Page 16
Freescale Semiconductor, Inc. Table 6. Bill of Material for Dual Band Solution at 4.8 V (continued) Ref Description C18 Capacitor 0603 C19 Capacitor 0805 C20 Capacitor 0805 C21 Capacitor 0805 C22 Capacitor 0805 C23 Capacitor 0805 C24 Capacitor C25 Capacitor ...
Page 17
Freescale Semiconductor, Inc. Table 6. Bill of Material for Dual Band Solution at 4.8 V (continued) Ref Description CR1 Diode U1 IPA DCS U2 IPA GSM U3 Q1 N–Channel MOSFET Q2 PNP Transistor Q3 PNP Transistor Q4 PNP Transistor MOTOROLA ...
Page 18
Freescale Semiconductor, Inc. 18 For More Information On This Product, NOTES MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION Go to: www.freescale.com ...
Page 19
Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION For More Information On This Product, NOTES Go to: www.freescale.com 19 ...
Page 20
... Motorola, Inc. Motorola, Inc Equal JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION Go to: www.freescale.com AN1602/D ...