DS2016 Dallas Semiconducotr, DS2016 Datasheet - Page 4

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DS2016

Manufacturer Part Number
DS2016
Description
2k x 8 3V/5V Operation Static RAM
Manufacturer
Dallas Semiconducotr
Datasheet

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RECOMMENDED DC OPERATING CONDITIONS
DC CHARACTERISTICS
AC CHARACTERISTICS READ CYCLE
PARAMETER
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Voltage
PARAMETER
Input Leakage Current
I/O Leakage Current
Output High Current
Output Low Current
Standby Current
Standby Current
Standby Current
Operating Current
PARAMETER
Read Cycle Time
Access Time
Output High-Z
from Deselection
Output Hold from
Address Change
OE
CE
CE
to Output Valid
to Output Valid
or
OE
to Output Active
SYMBOL
I
I
I
I
I
I
I
CCS1
CCS2
CCS2
CCO
I
OH
LO
OL
IL
SYMBOL
SYMBOL
+3-VOLT OPERATION
V
t
V
t
V
V
t
t
t
t
t
ACC
COE
OD
OH
RC
OE
CO
DR
CC
IH
IL
CE
CE
CE
CE
CONDITIONS
=V
0V V
V
V
=0.6V min cycle
V
V
CC
CC
CE
IH
OH
OL
-0.3V T
-0.3V T
4 of 9
, 0V V
MIN
MIN
(T
(T
-0.3
250
2.7
2.0
2.0
= 2.0V
= 0.4V
= 2.2V
15
15
IN
5
A
A
= -40°C to +85°C; V
= -40°C to +85°C; V
V
IO
A
A
CC
=60°C
=25°C
TYP
TYP
V
3.0
CC
V
MIN TYP
-0.5
4.0
CC
MAX
MAX
250
120
250
100
3.5
0.6
3.5
+ 0.3
(T
A
CC
CC
= -40°C to +85°C)
UNITS
UNITS
MAX
= 2.7V to 3.5V)
= 2.7V to 3.5V)
±0.1
±0.5
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
500
0.1
50
25
NOTES
UNITS
NOTES
mA
mA
mA
mA
µA
µA
nA
nA
DS2016

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