DS2016 Dallas Semiconducotr, DS2016 Datasheet - Page 3

• Manufacturer Part Number: DS2016
• Description: 2k x 8 3V/5V Operation Static RAM
• Manufacturer: Dallas Semiconducotr

AC CHARACTERISTICS READ CYCLE
AC CHARACTERISTICS WRITE CYCLE
DATA RETENTION CHARACTERISTICS
* Typical values are at 25°C
PARAMETER
Read Cycle Time
Access Time
Active
Output High-Z from
Deselection
Output Hold from
Address Change
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery
Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time
PARAMETER
Data Retention Supply
Voltage
Data Retention
Current at 5.5V
Data Retention
Current at 2.0V
Chip Deselect to Data
Retention
Recovery Time
OE
CE
CE
WE
WE
to Output Valid
to Output Valid
or
OE
to Output
SYMBOL
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
t
ACC
COE
t
WC
AW
WR
OD
OH
WP
DH
RC
OE
CO
DS
I
I
V
t
CCR1
CCR2
CDR
t
DR
R
MIN TYP MAX MIN TYP MAX
MIN TYP MAX MIN TYP MAX
100
100
75
10
40
5
5
5
0
5
0
DS2016-100
DS2016-100
CE
CE
CE
CONDITIONS
3 of 9
V
V
V
CC
CC
CC
100
100
50
35
35
- 0.5V
- 0.5V
- 0.5V
(T
(T
A
A
= -40°C to +85°C; V
= -40°C to +85°C; V
150
150
120
10
10
10
60
5
0
5
0
DS2016-150
DS2016-150
MIN TYP
2.0
0
2
150
150
0.1*
(T
50*
70
60
70
A
= -40°C to +85°C)
UNITS
UNITS
MAX
CC
750
5.5
CC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
= 5V
= 5V 10%)
NOTES
NOTES
UNITS
µA
nA
ms
10%)
µs
V
DS2016