SUF-4000 Sirenza Microdevices, SUF-4000 Datasheet

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SUF-4000

Manufacturer Part Number
SUF-4000
Description
Cascadable pHEMT MMIC Amplifier
Manufacturer
Sirenza Microdevices
Datasheet
Product Description
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
Test Conditions: V
Broomfield, CO 80021
Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband
high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm
applications.
303 S. Technology Ct.
Symbol
ΔG/ΔT
Rth, j-l
30
25
20
15
10
P1dB
OIP3
ORL
5
0
IRL
Isol
NF
G
V
I
D
0
D
p
Test Conditions:
GAIN
Small Signal Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Device Operating Voltage
Device Operating Current
Gain Variation vs. Temperature
Thermal Resistance (junction-to-backside)
3
Z
S
Gain & Return Loss vs. Frequency
S
= 5.0V, I
= Z
2
die. It is well-suited for RF, LO, and IF driver
ORL
L
= 50 Ohms, 25C, GSG Probe Data With Bias Tees
(GSG Probe Data)
Fre que ncy (Ghz)
6
D
= 73mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
IRL
Parameters
V
T
L
S
= 25ºC
= 5 V
9
\
12
Phone: (800) SMI-MMIC
I
Z
D
S
= 80 mA Typ.
= Z
15
L
= 50 Ohms
0
-5
-10
-15
-20
-25
-30
1
dB/°C
°C/W
Units
dBm
dBm
mA
dB
dB
dB
dB
dB
V
Product Features
• 5V Operation, No Dropping Resistor
Applications
SUF-4000
0.15-10 GHz, Cascadable pHEMT
MMIC Amplifier
High Gain = 17.0 dB @ 2 GHz
P1dB = 21 dBm @ 2 GHz
Low-noise, Efficient Gain Block
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Topology
Broadband Communications
High IP3 RF Driver Applications
Broadband Performance
LO and IF Mixer Applications
Test Instrumentation
Military & Space
OIP
Measured with Bias Tees
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Frequency
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
Min.
Preliminary
-11.5
-18.0
-20.0
-21.0
-20.0
http://www.sirenza.com
17.0
14.5
21.0
20.0
32.0
30.5
12.0
0.01
Typ.
164
2.8
3.7
5.0
73
EDS-105418 Rev A
Max.

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SUF-4000 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0 ...

Page 2

... Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 -20C 25C 85C Phone: (800) SMI-MMIC 2 SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier P1dB vs. Frequency 25C 16 -20C 15 85C Frequency (GHz) S22 vs. Frequency ...

Page 3

... Phone: (800) SMI-MMIC 3 SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier OIP3 S11 (dBm) (dB) -18.0 -19.5 32.5 -20.0 32.0 -18.5 31.0 -14.5 30.5 -11.5 -9.0 Parameter Max Device Current ( Max Device Voltage ( Max RF Input Power Max Dissipated Power Max Junction Temperature ( Operating Temperature Range ( Max Storage Temp ...

Page 4

... Description Interconnect Wire or Ribbon 50 Ω Line 3-5 mil gap Phone: (800) SMI-MMIC 4 SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier 2 Notes: 1. All Dimensions in Inches [Millimeters connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. ...

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