SUF-6000 Sirenza Microdevices, SUF-6000 Datasheet

SUF-6000

Manufacturer Part Number

SUF-6000

Description

2-16 Ghz Broadband Phemt Amplifier

Manufacturer

Sirenza Microdevices

Datasheet

1.SUF-6000.pdf (4 pages)

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Product Description

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

Test Conditions:

Broomfield, CO 80021

Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage

amplifier covering 2-16 GHz for wideband communication and general

purpose applications. This pHEMT FET-based amplifier uses a patented

self-bias Darlington topology featuring a gain and temperature

compensating active bias network that operates from a single 5V supply.

Its compact size make it ideal for high-density multi-chip module

applications.

303 S. Technology Ct.

Symbol

ΔG/ΔT

Rth, j-l

P1dB

OIP3

ORL

IRL

Isol

Test Conditions:

Small Signal Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

Input Return Loss

Output Return Loss

Reverse Isolation

Device Operating Voltage

Device Operating Current

Device Gain Temperature Coefficient

Thermal Resistance (junction-to-backside)

Gain & Return Loss vs. Frequency

ORL

= 5.0V, I

= Z

IRL

Frequency (GHz)

= 50 Ohms, 25C, GSG Probe Data With Bias Tees

Gain

GSG Probe Data

= 107mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm

Parameters

= 25ºC

= 5 V

Phone: (800) SMI-MMIC

= 80 mA Typ.

= Z

= 50 Ohms

-5

-10

-15

-20

-25

-30

dB/°C

°C/W

Units

dBm

SUF-6000

2-16 GHz Broadband pHEMT Amplifier

Product Features

•

• 5V Operation, No Dropping Resistor

•

Applications

•

High Gain = 17.4 dB @ 14 GHz

P1dB = 12.0 dBm @ 14 GHz

Low Gain Variation vs. Temperature

Patented Thermal Design

Patented Self-Bias Darlington Circuit

Broadband Communications

High IP3 RF Driver Applications

Broadband Performance

IP3 = 24.9 dBm @ 14 GHz

LO and IF Mixer Applications

Test Instrumentation

Military & Space

OIP

Measured with Bias Tees

Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Frequency

14 GHz

2 GHz

6 GHz

2 GHz

6 GHz

2 GHz

6 GHz

2 GHz

6 GHz

2 GHz

6 GHz

2 GHz

6 GHz

2 GHz

6 GHz

Advanced Information

Min.

-14.2

-19.7

-12.1

-26.2

-19.4

-11.5

-36.9

-34.4

-32.6

http://www.sirenza.com

TBD

18.0

20.5

17.4

13.0

14.0

12.0

25.3

27.5

24.9

Typ.

107

5.0

4.7

6.0

5.0

EDS-105420 Rev A

Max.

Related parts for SUF-6000

SUF-6000 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage amplifier covering 2-16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. ...

Page 2

... Frequency (GHz) OIP3 vs. Frequency (0dBm/tone, 1MHz spacing -20C 25C 20 85C Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 SUF-6000 2-16 GHz Broadband pHEMT Amplifier -10 -15 25C -20 -40C 85C -25 - ...

Page 3

... Test Conditions: GSG Probe Data With Bias Tees, OIP Current Variation vs. Temperature Current vs. Voltage 120 115 110 105 100 95 90 4.75 4.85 4.95 Volatage (V) 303 S. Technology Ct. Broomfield, CO 80021 SUF-6000 2-16 GHz Broadband pHEMT Amplifier Gain P1dB (dB) (dBm) 18.0 13.0 18.9 13.6 19.6 13.7 20.2 14.1 20.5 14.0 19.6 13.2 18.4 12.9 17.4 12.0 14.5 10.6 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C ...

Page 4

... Device Assembly Interconnect Wire or Ribbon 50 Ω Line DC Block 303 S. Technology Ct. Broomfield, CO 80021 SUF-6000 2-16 GHz Broadband pHEMT Amplifier Notes: Description 1. All Dimensions in Inches [Millimeters connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. ...

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