TPCP8002 Toshiba Semiconductor, TPCP8002 Datasheet - Page 4

• Manufacturer Part Number: TPCP8002
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

100
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Single Pulse test
Common source
V DS = 10 V
Single Pulse test
Common source
VDS = 10 V
2
Drain−source voltage V
0.4
Gate−source voltage V
0.2
1.8
Drain current I
0.8
1
0.4
I
I
D
|Y
Ta = −55°C
D
– V
fs
– V
100°C
1.2
| – I
1.7
GS
DS
D
0.6
100°C
D
1.6
10
Ta = −55°C
DS
GS
(A)
Single Pulse test
Common source
25°C
V GS = 1.4 V
Ta = 25°C
25°C
0.8
(V)
(V)
2
1.5
1.6
100
1.0
2.4
4
0.2
0.8
0.6
0.4
100
20
16
12
0
10
8
4
0
1
1
0.1
0
0
3
Common source
Ta = 25°C
Single Pulse test
Drain−source voltage V
Gate−source voltage V
0.4
2
I D = 9.1 A
2
4.5
Drain current I
1
R
2.3
0.8
V
4
DS (ON)
1.9
I
DS
D
V GS = 2.5 V
– V
– V
DS
GS
– I
1.2
6
D
D
10
4.5
www.DataSheet4U.com
GS
(A)
DS
Single Pulse test
Single Pulse test
Common source
Common source
Ta = 25°C
Ta = 25°C
V GS = 1.4 V
1.6
8
(V)
(V)
TPCP8002
2007-01-16
1.8
1.7
1.6
1.5
100
10
2