TPCP8002 Toshiba Semiconductor, TPCP8002 Datasheet - Page 3

• Manufacturer Part Number: TPCP8002
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
Q
t
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
3
= 9.1 A, V
(Ta = 25°C)
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±10 V, V
= 2.5 V, I
= 4.5 V, I
≈ 16 V, V
5 V
0 V
Test Condition
Test Condition
w
D
D
GS
GS
GS
GS
D
D
GS
= 10 μs
GS
= 0.2 mA
= 4.5 A
DS
= 4.5 A
= 4.5 A
⎯
= 0 V
= −12 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 5 V, I
= 0 V
V
I
D
DD
= 4.5 A
∼ − 10 V
D
= 9.1 A
V
OUT
Min
Min
0.5
20
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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8
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3700
Typ.
Typ.
400
450
110
10
36
14
24
30
48
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
8
TPCP8002
2007-01-16
−1.2
Max
13.7
Max
36.4
±10
1.2
10
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
S
A
V
V