TPC8207 Toshiba Semiconductor, TPC8207 Datasheet - Page 2

• Manufacturer Part Number: TPC8207
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3:
Note 4: V
Note 5: Repetitive rating: pulse width limited by max channel temperature.
Note 6: • on lower right of the marking indicates Pin 1.
a)
a)
b)
Device mounted on a glass-epoxy board (a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
(Note 6)
※ Weekly code:
T P C 8 2 0 7
DD
= 16 V, T
(a)
Characteristics
ch
Week of manufacture
(01 for the first week of a year, : sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 1.0 mH, R
(Note 2a) Single-device value at
(Note 2b) Single-device value at
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(Three digits)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Single-device operation
dual operation
Single-device operation
dual operation
(Note 3a)
(Note 3b)
(Note 3a)
(Note 3b)
G
2
= 25 Ω, I
b)
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
Device mounted on a glass-epoxy board (b)
AR
= 6 A
(b)
83.3
Max
114
167
278
°C/W
°C/W
Unit
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2004-07-06
TPC8207