TPC8207 Toshiba Semiconductor, TPC8207 Datasheet
TPC8207
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TPC8207 Summary of contents
Page 1
... V V GSS 1 1.1 D (2) P 0. 0.45 D ( 150 °C ch −55~150 T °C stg 1 TPC8207 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration 2004-07-06 ...
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... Symbol Max Single-device operation R 83.3 th (ch-a) (1) (Note 3a) dual operation R 114 th (ch-a) (2) (Note 3b) Single-device operation R 167 th (ch-a) (1) (Note 3a) dual operation R 278 th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board (b) ( Ω TPC8207 Unit °C/W °C/W FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2004-07-06 ...
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... gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8207 Min Typ. Max Unit ⎯ ⎯ ± 10 µ A ⎯ ⎯ µ ⎯ ⎯ ⎯ ⎯ 8 ⎯ 0.5 1.2 V ⎯ ...
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... Drain-source voltage V 1.0 0.8 0.6 0 Gate-source voltage V R 1000 100 10 1 0.1 1 100.0 Drain current I 4 TPC8207 I – Common source Ta = 25°C Pulse test 1.8 1.7 1.65 1.6 1.55 1 1 – Common source Ta = 25°C Pulse test ...
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... Ambient temperature Ta (°C) 100 Dynamic input/output characteristics 200 Total gate charge Q 5 TPC8207 – Common source Ta = 25°C Pulse test −0.6 −0.8 −1 −1.2 (V) DS – Ta Common source 200 µA ...
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... I D max (pulse 0.5 0.3 0.1 * Single pulse Ta = 25°C 0.05 0.03 Curves must be derated linearly V DSS max with increase in temperature. 0.01 0.01 0.03 0.1 0 Drain-source voltage V (V) DS − 0 100 Pulse width t (S) w 100 6 TPC8207 (4) (3) (2) (1) 1000 2004-07-06 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 TPC8207 030619EAA 2004-07-06 ...