TPC8206 Toshiba Semiconductor, TPC8206 Datasheet - Page 5

• Manufacturer Part Number: TPC8206
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

5000
3000
1000
120
100
500
300
100
2.0
1.6
1.2
0.8
0.4
80
60
40
20
50 Common source
30
10
-80
0
0
0.1
0
V GS = 0 V
Tc = 25°C
f = 1 MHz
Common source
Pulse test
(1)
(2)
(3)
(4)
V GS = 4 V
10
-40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Device mounted on a glass-epoxy board (a)
Device mounted on a glass-epoxy board (b)
t = 10 s
Capacitance – V
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
0
1
(Note 3b)
operation (Note 3b)
R
DS (ON)
P
D
100
40
– Ta
– Ta
1.3
80
10
DS
DS
2.5
1.3
I D = 5 A
150
(V)
120
2.5
I D = 5 A
(Note 2a)
(Note 2b)
C oss
C iss
C rss
160
200
100
5
100
0.1
10
50
40
30
20
10
-80
1
5
4
3
2
1
0
0
0
0
12
24
V DD = 48 V
Dynamic input/output characteristics
V DS
-40
5
Drain-source voltage V
Ambient temperature Ta (°C)
-0.4
Total gate charge Q
5
10
0
10
1
I
DR
3
V
12
th
-0.8
– V
40
15
– Ta
V GS = 0, -1 V
24
DS
g
80
20
DS
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
I D = 5 A
Ta = 25°C
Pulse test
(nC)
-1.2
V GS
(V)
V DD = 48 V
120
25
2003-02-18
TPC8206
-1.6
160
30
0
25
20
15
10
5