TPC8206 Toshiba Semiconductor, TPC8206 Datasheet - Page 3

• Manufacturer Part Number: TPC8206
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = = = = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
I
|Y
C
C
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
on
off
oss
t
t
iss
rss
gs
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
GS
3
= 5 A, V
(Ta = = = = 25°C)
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
~ - 48 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
10 V
0 V
Test Condition
Test Condition
D
GS
w
D
D
D
GS
GS
GS
= 2.5 A
GS
GS
= 10 ms
= 1 mA
= 2.5 A
= 2.5 A
DS
= 0 V
¾
= 0 V
= -12 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
D
V
= 2.5 A
DD
D
~ - 30 V
V
= 5 A
OUT
Min
Min
1.3
3.5
60
35
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
Typ.
800
190
7.0
2.6
2.3
55
40
60
10
22
17
12
¾
¾
¾
¾
¾
¾
¾
5
2003-02-18
TPC8206
Max
Max
-1.2
±10
2.5
10
¾
¾
75
50
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
20
Unit
Unit
mW
mA
mA
pF
nC
ns
V
V
S
A
V