TPC8115 Toshiba Semiconductor, TPC8115 Datasheet - Page 3

• Manufacturer Part Number: TPC8115
• Description: Lithium Ion Battery Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −10 A
GS
3
(Ta = 25°C)
= −10 A, V
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±8 V, V
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −16 V, V
−5 V
0 V
Test Condition
Test Condition
w
DS
D
D
= 10 µs
GS
GS
GS
D
D
D
GS
GS
GS
= −200μA
= −5.0 A
⎯
= −5.0 A
= −5.0A
= −5.0 A
= 0 V
= 0 V
= 0 V
= 8 V
= 0 V
= 0 V, f = 1 MHz
=− 5 V,
I
D
V
= −5 A
DD
∼ − −10 V
V
OUT
−0.5
Min
−20
Min
−4
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9130
1020
1110
Typ.
Typ.
228
666
115
9.0
6.5
⎯
⎯
⎯
⎯
⎯
15
40
14
26
18
34
⎯
⎯
2006-11-15
TPC8115
Max
−1.2
Max
±10
−10
−40
www.DataSheet4U.com
1.2
30
14
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V