TPC8115 Toshiba Semiconductor, TPC8115 Datasheet

TPC8115

Manufacturer Part Number

TPC8115

Description

Lithium Ion Battery Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.TPC8115.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

TPC8115

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Company:

H&T Electronics

Part Number:

TPC8115

Quantity:

875

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TPC8115(TE12L

Manufacturer:

TOSH

Quantity:

2 970

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TPC8115(TE12L,Q)

Manufacturer:

TOSHIBA

Quantity:

2 727

Current page: 1 of 7
Download datasheet (299Kb)

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to small and thin package

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

(Note 2a) (Note 4)

Pulse (Note 1)

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

= −0.5 to −1.2 V (V

(Note 1)

(Note 3)

= −10 µA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

stg

| = 40 S (typ.)

TPC8115

= 6.5 mΩ (typ.)

= −10 V, I

= −20 V)

−55 to 150

Rating

0.19

−20

−10

−40

−10

150

1.9

1.0

±8

= −1 mA)

Unit

°C

Weight: 0.080 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

2-6J1B

2006-11-15

TPC8115

―

www.DataSheet4U.com

Unit: mm

Related parts for TPC8115

Related keywords

TPC8115 datasheet
TPC8115 data sheet
TPC8115 pdf datasheet
TPC8115 component
TPC8115 part
TPC8115 distributor
TPC8115 RoHS
TPC8115 datasheet download