BYQ30EX Philips Semiconductors, BYQ30EX Datasheet - Page 3
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BYQ30EX
Manufacturer Part Number
BYQ30EX
Description
Rectifier diodes ultrafast/ rugged
Manufacturer
Philips Semiconductors
Datasheet
1.BYQ30EX.pdf
(6 pages)
Philips Semiconductors
October 1998
Rectifier diodes
ultrafast, rugged
Fig.3. Maximum forward dissipation P
I
I
12
10
R
V F
F
8
6
4
2
0
I
F
0
Forward dissipation, PF (W)
Vo = 0.75 V
Rs = 0.025 Ohms
diode; square current waveform where
Fig.1. Definition of t
2
Average forward current, IF(AV) (A)
I
rrm
Fig.2. Definition of V
0.1
dI
dt
I
Q
F(AV)
4
F
s
=I
0.2
F(RMS)
BYQ30
6
t
rr
x D.
I
rr
, Q
8
s
0.5
t
and I
p
fr
T
V F
D = 1.0
F
Ths(max) / C
= f(I
10%
10
rrm
D =
time
time
T
t
p
F(AV)
t
time
100%
) per
12
V
80
90
110
120
130
140
150
fr
3
Fig.4. Maximum forward dissipation P
diode; sinusoidal current waveform where a = form
12
10
8
6
4
2
0
0
Forward dissipation, PF (W)
1000
1000
Rs 0.025 Ohms
100
100
Vo = 0.75 V
10
10
1
1
1
trr / ns
1
1
trr / ns
Fig.6. Maximum t
Fig.5. Maximum t
Average forward current, IF(AV) (A)
2
factor = I
4
3
dIF/dt (A/us)
dIF/dt (A/us)
IF=1A
F(RMS)
BYQ30
4
10
10
2.8
rr
rr
IF=1A
at T
IF=10A
IF=10A
at T
BYQ30EX series
/ I
5
F(AV)
2.2
j
Product specification
j
= 100 ˚C.
= 25 ˚C.
.
6
1.9
Ths(max) / C
F
= f(I
a = 1.57
7
Rev 1.200
F(AV)
100
100
)per
8
90
100
110
120
130
140
150