BYQ30EX Philips Semiconductors, BYQ30EX Datasheet - Page 2

• Manufacturer Part Number: BYQ30EX
• Description: Rectifier diodes ultrafast/ rugged
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
October 1998
Rectifier diodes
ultrafast, rugged
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
I
V
R
rr
rrm
isol
F
fr
isol
th j-hs
th j-a
s
= 25 ˚C unless otherwise specified
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
j
= 25 ˚C unless otherwise stated
CONDITIONS
with heatsink compound
without heatsink compound
in free air
CONDITIONS
I
I
I
V
V
I
I
-dI
I
-dI
I
F
F
F
F
F
F
F
CONDITIONS
waveform;
R.H.
R
R
= 8 A; T
= 16 A; T
= 16 A;
= 2 A; V
= 1 A; V
= 1 A; V
= 1 A; dI
F
F
= V
= V
/dt = 100 A/ s
/dt = 50 A/ s; T
RWM
RWM
65% ; clean and dustfree
; T
j
R
R
R
F
2
= 150˚C
j
/dt = 10 A/ s
= 150˚C
j
= 100 ˚C
30 V; -dI
30 V;
30 V;
j
= 100 ˚C
F
/dt = 20 A/ s
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BYQ30EX series
TYP.
TYP.
TYP.
0.83
0.98
10
1.0
0.3
1.0
55
20
2
4
1
-
-
Product specification
MAX.
MAX.
MAX.
2500
0.95
1.15
1.25
5.0
7.0
0.6
30
11
25
-
2
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
mA
pF
nC
ns
V
V
V
A
V
A