MAS3795 Panasonic Semiconductor, MAS3795 Datasheet
MAS3795
Manufacturer Part Number
MAS3795
Description
Silicon epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.MAS3795.pdf
(3 pages)
www.DataSheet4U.com
Schottky Barrier Diodes (SBD)
MAS3795
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: June 2002
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• SSS-Mini type 3-pin package
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
reverse recovery time (t
V
F
= < 0.3 V (at I
2. Rated input/output frequency: 2 GHz
and the leakage of current from the operating equipment.
Parameter
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
F
= 1 mA)
*
A
F
rr
optimum for low voltage rectification
)
Wave Form Analyzer
(SAS-8130)
R
Symbol
i
= 50 Ω
V
I
T
V
I
T
FM
RM
stg
F
R
j
a
Symbol
= 25°C ± 3°C
V
V
C
I
t
a
η
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
3. * : t
30
30
30
V
I
I
V
I
I
V
R
F
F
F
rr
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00117AED
rr
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
V
measuring instrument
R
R
= 10 mA
(peak)
t
r
Unit
mA
mA
Input Pulse
10%
°C
°C
t
t
δ = 0.05
V
V
p
r
90%
Conditions
= 0.35 ns
L
= 2 µs
, f = 30 MHz
= 100 Ω
t
L
p
= 10 pF
t
I
Marking Symbol: M2
Internal Connection
F
I
I
R
0.23
F
R
Output Pulse
L
= 10 mA
= 10 mA
= 100 Ω
+0.05
–0.02
0.33
t
I
rr
5°
rr
+0.05
–0.02
= 1 mA
(0.40)
3
0.80
1.20
1
Min
t
(0.40)
±0.05
±0.05
2
1
Typ
3
1.5
1.0
65
SSSMini3-F1 Package
2
Max
0.3
1.0
30
0.10
+0.05
–0.02
1: Anode
2: N.C.
3: Cathode
Unit: mm
Unit
µA
pF
ns
%
V
1
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MAS3795 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) www.DataSheet4U.com MAS3795 Silicon epitaxial planar type For high-speed switching circuits ■ Features • High-density mounting is possible • Optimum for high frequency rectification because of its short reverse recovery time ( • Low forward voltage V optimum for low voltage rectification F = < ...
Page 2
... MAS3795 www.DataSheet4U.com 75°C 25° 125°C T –20° −1 10 − 0.4 0.8 1.2 1.6 2.0 Forward voltage −1 10 − 120 160 ( °C ) Ambient temperature V ...
Page 3
Request for your special attention and precautions in using the technical information (1) An export permit needs to be obtained from the competent authorities of the Japanese Govern- ment if any of the products or technologies described in this ...