MMFT1N10 Motorola, MMFT1N10 Datasheet - Page 2

• Manufacturer Part Number: MMFT1N10
• Description: MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
• Manufacturer: Motorola

(1) Pulse Test: Pulse Width 300 s, Duty Cycle
MMFT1N10E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS (1)
2
Drain–to–Source Breakdown Voltage, (V GS = 0, I D = 250 A)
Zero Gate Voltage Drain Current, (V DS = 100 V, V GS = 0)
Gate–Body Leakage Current, (V GS = 20 V, V DS = 0)
Gate Threshold Voltage, (V DS = V GS , I D = 1 mA)
Static Drain–to–Source On–Resistance, (V GS = 10 V, I D = 0.5 A)
Drain–to–Source On–Voltage, (V GS = 10 V, I D = 1 A)
Forward Transconductance, (V DS = 10 V, I D = 0.5 A)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Forward On–Voltage
Forward Turn–On Time
Reverse Recovery Time
Characteristic
(T A = 25 C unless otherwise noted)
V GS = 10 V, R G = 50 ohms,
V GS = 10 V, R G = 50 ohms,
V GS = 10 V, R G = 50 ohms,
(V DD = 25 V, I D = 0.5 A
(V DD = 25 V, I D = 0.5 A
See Figures 15 and 16
See Figures 15 and 16
See Figures 15 and 16
(V DS = 80 V, I D = 1 A,
(V DS = 80 V, I D = 1 A,
I S = 1 A, V GS = 0,
dl S /dt = 400 A/ s,
dl S /dt = 400 A/ s,
I S = 1 A, V GS = 0
R GS = 25 ohms)
R GS = 25 ohms)
R GS = 25 ohms)
2%
V GS = 10 Vdc)
V GS = 10 Vdc)
GS = 25 ohms)
(V DS = 20 V,
(V DS = 20 V,
f = 1 MHz)
f = 1 MHz)
f = 1 MHz)
V R = 50 V
V R = 50 V
V GS = 0,
V GS = 0,
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
C rss
V SD
C iss
Q gs
Q gd
g FS
t on
Q g
t rr
t r
t f
Min
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
Limited by stray inductance
Typ
410
145
2.2
1.3
3.2
0.8
55
15
15
30
32
90
—
—
—
—
—
—
7
Max
0.25
0.33
100
4.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ohms
mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Adc
pF
pF
nC
nC
ns
ns
ns
ns