RMBA09501-58 Raytheon RF Components, RMBA09501-58 Datasheet - Page 4

• Manufacturer Part Number: RMBA09501-58
• Description: Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
• Manufacturer: Raytheon RF Components

RF Components
or Test Evaluation Board
www.raytheonrf.com
(RMBA09501-58-TB,
board (RMBA09501-
for Heat-Sinking the
G654188/G654942)
Considerations
Test Procedure
for the evaluation
RMBA09501-58
Parts List
Thermal
58-TB)
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN
VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to
provide air cooling across the heat sink of RMBA09501.) Note: Vdd1, 2 are tied together.
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board
Step 3: Slowly apply drain supply voltages of
The PWB must be prepared with either an embedded copper slug in the board where the package is to
be mounted or a heat sink should be attached to the backside of the PWB where the package is to be
mounted on the front side. The slug or the heat sink should be made of a highly electrically and
thermally conductive material such as copper or aluminum. The slug should be at least the same
thickness as the PWB. In the case of the heat sink, a small pedestal should protrude through a hole in
the PWB where the package bottom is directly soldered. In either configuration, the top surface of the
slug or the pedestal should be made coplanar with the package lead mounting plane i.e., the top
surface of the PWB.
attach the heat sink to the backside of the PWB. Then, using Sn63, the package bottom should be
firmly soldered to the slug or the pedestal while the pins are soldered to the respective pads on the front
side of the PWB without causing any stress on the pins. Remove flux completely if used for soldering.
Specifications are based on most current or latest revision.
Revised June 27, 2003
RMBA09501-58 - Cellular 2 Watt Linear GaAs
MMIC Power Amplifier
for the ground of the DC supplies. Slowly
apply gate supply voltages as specified on
results sheet supplied with test board to
the board terminals Vgg1 and Vgg2.
+7.0 V to the board terminals Vdd1, 2.
Adjust Vgg to set the total quiescent
current Idq1 and Idq2 (with no RF applied)
Idq as per supplied result sheet. Gate
supply voltages (Vgg i.e., Vgg1, Vgg2)
may be adjusted, only if quiescent current
(Idq1 and Idq2) values desired are
different from those noted on the data
summary supplied with product samples.
Part
C1,C3
C2,C9
C8
C4,C5,C11,C12 1000 pF
C6,C7
L1
L2
L3
R1
S1, S2
W1
U1
P1,P2
Board
C10
C13, C14
P3
Use Sn96 solder (96.5% Sn and 3.5% Ag) at 220ºC for 20 seconds or less to
Value
39 pF
6.8 pF
8.2 pF
4.7 uF
4.7 nH
22 nH
39 nH
10 Ohm
26AWG (0.015” dia) Wire
RMBA09501-58 PA
Right angle Pin Header
Brass SMA Connectors
FR4
100 pF
1.0 uF
Page 4
EIA Size
0402
0402
0402
0402
3528
0603
0603
1008
0402
0603
0805
Step 4: After the bias condition is established,
Step 5: Follow turn-off sequence of:
RF input signal may now be applied at the
appropriate frequency band and
appropriate power level.
(i) Turn off RF Input Power
(ii) Turn down and off drain voltages
Vdd1, 2.
(iii) Turn down and off gate voltages Vgg1
and Vgg2.
Vendor(s)
Murata, GRM36COG390J050
Murata, GRM36COG6R8B050
Murata, GRM36COG8R2B50
Murata, GRM36X7R102K050
TDK, C3216X7R102K050
Toko, LL1608-FH4N7S
Toko, LL1608-FH22NK
Coilcraft, 1008HQ-39NTKBC
IMS, RCI-0402-10R0J
Bar or Ni Ribbon Short
Alpha, 2853/1
Raytheon
3M 2340-5211TN
Johnson Components 142-0701-841
Raytheon Dwg# G654626, V1
Murata, GRM36COG101J50
Murata, GRM39Y5V104Z50
ADVANCED INFORMATION
Raytheon RF Components
Andover, MA 01810
362 Lowell Street