R1271NS12x Westcode Semiconductors, R1271NS12x Datasheet - Page 4

• Manufacturer Part Number: R1271NS12x
• Description: (R1271NS10x / R1271NS12x) Distributed Gate Thyristor
• Manufacturer: Westcode Semiconductors

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WESTCODE
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
11.0 Reverse recovery ratings
12.0 Reverse Recovery Loss
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
W
T
SINK
R
AV
12.1 Determination by Measurement
th(J-Hs)
(
Let E
Let R
and T
(i) Q
i.e.
(iii)
where k = 0.227 (°C/W)/s
(ii) Q
E = Area under reverse loss waveform per pulse in joules (W.s)
new
f = Rated frequency (in Hz) at the original heat sink temperature
= D.C. thermal resistance (°C/W)
E
Positive development in power electronics
)
ra
th(J-Hs)
rr
p
SINK
P
is based on 50% I
is based on a 150 s integration time.
be the Energy per pulse for a given current and pulse width, in joules
T
be the heat sink temperature.
f
be the steady-state d.c. thermal resistance (junction to sink)
SINK
and
(
original
T
SINK
rm
Q
K
)
chord as shown in Fig. 1 below.
rr
(max
Factor
E
150
.)
0
k
i
s
rr
125
.
Page 4 of 12
dt
Fig. 1
t
f
t
1
2
R
W
th
AV
J
Hs
R
th
J
Hs
R1271NS10x to R1271NS12x
June, 2001