R1271NS12x Westcode Semiconductors, R1271NS12x Datasheet

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R1271NS12x

Manufacturer Part Number
R1271NS12x
Description
(R1271NS10x / R1271NS12x) Distributed Gate Thyristor
Manufacturer
Westcode Semiconductors
Datasheet
www.DataSheet4U.com
V
V
V
V
I
I
I
I
I
I
I
I
I
di
V
P
P
V
T
T
Absolute Maximum Ratings
Notes:-
1)
2)
3)
4)
5)
6)
7)
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
T(AV)
T(AV)
T(AV)
T(RMS)
T(d.c.)
TSM
TSM2
2
2
WESTCODE
HS
stg
DRM
DSM
RRM
RSM
t
t
RGM
G(AV)
GM
GD
T
/dt
De-rating factor of 0.13% per °C is applicable for T
Double side cooled, single phase; 50Hz, 180° half-sinewave.
Single side cooled, single phase; 50Hz, 180° half-sinewave.
Double side cooled.
Half-sinewave, 125°C T
V
Rated V
D
=67% V
Types R1271NS10x to R1271NS12x
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge t
Peak non-repetitive surge t
I
I
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
2
2
t capacity for fusing t
t capacity for fusing t
DRM
DRM
.
, I
FG
Distributed Gate Thyristor
=2A, t
j
r
initial.
0.5µs, T
p
p
=10ms, V
=10ms, V
sink
sink
sink
sink
=25°C, (note 4)
p
p
=55°C, (note 2)
=85°C, (note 2)
=85°C, (note 3)
case
=10ms, V
=10ms, V
=125°C.
RM
RM
sink
=0.6V
=25°C, (note 2)
10V, (note 5)
RM
RM
=0.6V
RRM
10V, (note 5)
j
Page 1 of 12
, (note 5)
below 25°C.
RRM
, (note 5)
Date:- 14 Jun, 2001
Data Sheet Issue:- 1
MAXIMUM
MAXIMUM
-40 to +125
-40 to +150
1000-1200
1000-1200
1000-1200
1100-1300
1.62×10
1.96×10
LIMITS
LIMITS
1271
2599
2050
1000
1500
19.8
0.25
18.0
821
458
30
5
2
6
6
UNITS
UNITS
A/µs
A/µs
June, 2001
A
A
kA
kA
°C
°C
W
W
V
V
V
V
A
A
A
A
A
V
V
2
2
s
s

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R1271NS12x Summary of contents

Page 1

... Double side cooled. 4) Half-sinewave, 125° =67 =2A DRM FG Rated DRM Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 =55°C, (note 2) sink =85°C, (note 2) sink =85°C, (note 3) sink =25°C, (note 2) sink =25°C, (note 4) sink =10ms, V =0.6V , (note RRM ...

Page 2

... The R1271 series of Distributed Gate thyristors have fast switching characteristics provided by a regenerative, interdigitated gate. They also exhibit low switching losses and are therefore suitable for medium current, medium frequency applications. Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 MIN. TYP. MAX. TEST CONDITIONS ...

Page 3

... The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (t ) and for the off-state voltage to reach full value ( max t t pulse q Data Sheet. Types R1271NS10x to R1271NS12x Issue DRM DSM RRM V 1000 1200 /re-applied dv/dt combinations when supply has been agreed ...

Page 4

... SINK ( new ) SINK where k = 0.227 (°C/W)/ Area under reverse loss waveform per pulse in joules (W. Rated frequency (in Hz) at the original heat sink temperature R = D.C. thermal resistance (°C/W) th(J-Hs) Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 T 125 W (max .) SINK chord as shown in Fig. 1 below. rm Fig. 1 150 ...

Page 5

... This gate drive must be applied when using the full di/dt capability of the device. The duration of pulse may need to be configured with respect to the application but should be no shorter than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to trigger the device. Data Sheet. Types R1271NS10x to R1271NS12x Issue ...

Page 6

... Time Constant Term 1 r 0.01249139 p 0.8840810 p Term 1 r 0.02919832 p 6.298105 p Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 using ABCD Coefficients vs page 7 is represented in two ways and r tangent used for rating purposes and agree with the true device characteristic over a current range, which T 125° ...

Page 7

... Max 0.25 Gate Trigger Current - I Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 Figure 2 - Transient thermal impedance T = 125°C j 0.0001 R1271NS10x-12x Issue 1 0.00001 (V) T Figure 4 - Gate characteristics - Power curves Min V ...

Page 8

... Positive development in power electronics Figure 5 - Total recovered charge, Q 10000 1000 100 10 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, I 1000 100 10 10 Commutation rate - di/dt (A/µs) Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 Figure 6 - Recovered charge 1000 2000A 100 1500A 1000A 500A T = 125°C j R1271NS10x-12x ...

Page 9

... Commutation rate - di/dt (A/µs) Figure 11 - Sine wave frequency ratings 1.00E+05 500A 1kA 1.00E+04 2kA 3kA 1.00E+03 5kA 1.00E+02 1.00E+01 1.00E-05 1.00E-04 Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 Figure 10 - Sine wave energy per pulse 2000A 1000A 500A 250A Snubber: 0.25µF 125° 67 ...

Page 10

... T =85°C Hs di/dt=100A/µs R1271NS10x-12x Issue 1 1.00E+01 1.00E-05 1.00E-04 Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 Figure 14 - Square wave frequency ratings 100% Duty Cycle 1.00E-03 1.00E-02 Pulse width (s) Figure 16 - Square wave frequency ratings 100% Duty Cycle 1.00E-03 1.00E-02 Pulse width (s) ...

Page 11

... Figure 19 - Maximum surge and I 100000 10000 1000 1 3 Duration of surge (ms) Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 Figure 18 - Square wave energy per pulse 1.00E-03 1.00E-02 Pulse width ( Ratings Gate may temporarily lose control of conduction angle ...

Page 12

... In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types R1271NS10x to R1271NS12x Issue 1 (Please quote 10 digit code as below) NS ...

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