2SJ599 NEC, 2SJ599 Datasheet - Page 2

• Manufacturer Part Number: 2SJ599
• Description: SWITCHING P-CHANNEL POWER MOS FET
• Manufacturer: NEC

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ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
GS
PG.
= –20 V
CHARACTERISTICS
I
G
PG
V
0 V
= 2 mA
50
DD
I
D
R
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
DD
L
L
V
ch
SYMBOL
DD
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
A
DSS
GSS
t
t
t
oss
iss
rss
GS
GD
rr
fs
r
f
G
rr
Preliminary Data Sheet D14644EJ1V0DS
= 25°C)
|
V
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = –100 A / s
D
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
GS(on)
DD
DD
GS
G
= –10 A,
= –20A,
= –20 A, V
= –20 A, V
V
= 0
= –48 V,
GS
0
= –60 V, V
= –10 V, I
= –10 V, I
= –10 V,
=
= –10 V, I
= –4.0 V, I
= 0 V,
= –30 V,
= –10 V
Duty Cycle
PG.
( )
+
= –10 V,
= 1 s
20 V, V
TEST CIRCUIT 2 SWITCHING TIME
TEST CONDITIONS
GS
GS
D
D
D
D
GS
DS
= –1 mA
= –10 A
= 0 V
= 0 V
= –10 A
= –10 A
R
= 0 V
= 0 V
1%
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
MIN.
GS
DS
1.5
8
TYP.
1300
V
240
100
102
V
V
2.0
1.0
16
60
78
52
16
26
51
8
9
5
7
DS
GS
0
DS
0
t
10%
( )
( )
d(on)
90%
MAX.
–10
+
111
t
2.5
75
on
10
10%
t
r
V
GS
t
d(off)
10%
2SJ599
UNIT
(on)
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
t
off
90%
t
90%
f