2SJ494 NEC, 2SJ494 Datasheet
2SJ494
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2SJ494 Summary of contents
Page 1
... I + (pulse 2 150 ° –55 to +150 °C stg 3.57 °C/W 62.5 °C/W 2SJ494 PACKAGE DIMENSIONS (in millimeter) 4.5±0.2 10.0±0.3 3.2±0.2 2.7±0.2 2.5±0.1 0.7±0.1 1.3±0.2 1.5±0.2 0.65±0.1 2.54 2.54 1. Gate 2. Drain 3. Source ISOLATED TO-220 (MP-45F) Drain Body Diode Gate ...
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... (on) Wave Form Wave Form (on (off off 2SJ494 MIN. TYP. MAX. UNIT –1.0 –1.5 –2 – +10 2360 pF 1060 pF 350 160 ...
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... T DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –100 –80 –60 –40 –20 –100 Pulsed = –10 V –15 2SJ494 100 120 140 160 - Case Temperature - ˚C C Pulsed V = – – –8 –16 –4 –12 - Drain to Source Voltage - V 3 ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 = –10 V 100 50 –100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed –2.0 –1.5 –1.0 = –10 V –0.5 0 –100 –50 T 2SJ494 R = 62.5 ˚C/W th(ch- 3.57 ˚C/W th(ch-c) Single Pulse 10 100 1 000 Pulsed I = – –5 –10 –20 - Gate to Source Voltage - – ...
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... C rss 10 t d(on) 1 –0.1 –100 I D DYNAMIC INPUT/OUTPUT CHARACTERISTICS –80 – – –24 V –40 –12 V –20 –100 2SJ494 Pulsed = 0 GS –3.0 –2 – – –1 –10 –100 - Drain Current - – – –12 –10 – ...
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... NEC semiconductor device reliability/quality control system Power MOS FET features and application to switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) 6 2SJ494 Document No. C11745E D12971E TEA-1035 TEA-1037 ...
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... [MEMO] 2SJ494 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SJ494 M4 96. 5 ...