ZXMD63N03X Zetex Semiconductors, ZXMD63N03X Datasheet - Page 4

• Manufacturer Part Number: ZXMD63N03X
• Description: DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ZXMD63N03X
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
36
30
1.0
1.9
amb
= 25°C unless otherwise stated).
TYP.
290
70
20
2.5
4.1
9.6
4.4
16.9
9.5
MAX.
1
100
0.135
0.200
8
1.2
2
0.95
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test
circuit)
V
I
(Refer to test
circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=1.7A
=25°C, I
=25°C, I
=6.1 , R
=30V, V
= 20V, V
=10V, I
=4.5V, I
=10V,I
=25 V, V
=24V,V
=0V
=15V, I
S
F
D
D
=1.7A,
GS
=1.7A,
=0.85A
D
D
D
GS
=1.7A
GS
GS
=1.7A
DS
=0.85A
=8.7
=10V,
DS
=0V
=0V,
=0V
= V
=0V
GS