ZXMD63N03X Zetex Semiconductors, ZXMD63N03X Datasheet

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ZXMD63N03X

Manufacturer Part Number
ZXMD63N03X
Description
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMD63N03XTA
Manufacturer:
DIODES/美台
Quantity:
20 000
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
PROVISIONAL ISSUE A - JULY 1999
DEVICE
ZXMD63N03XTA
ZXMD63N03XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM63N03
=30V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.135 ; I
TAPE WIDTH (mm)
12mm embossed
12mm embossed
D
=2.3A
33
QUANTITY
PER REEL
1000 units
4000 units
ZXMD63N03X
MSOP8
Top View

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ZXMD63N03X Summary of contents

Page 1

... Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXMD63N03XTA 7 ZXMD63N03XTC 13 DEVICE MARKING ZXM63N03 PROVISIONAL ISSUE A - JULY 1999 =2.3A D TAPE WIDTH (mm) QUANTITY PER REEL 12mm embossed 1000 units 12mm embossed 4000 units 33 ZXMD63N03X MSOP8 Top View ...

Page 2

... ZXMD63N03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T =25°C (a)(d) A Linear Derating Factor Power Dissipation at T =25°C (a)(e) A Linear Derating Factor Power Dissipation at T =25° ...

Page 3

... CHARACTERISTICS 1.4 1.2 1.0 0.8 0.6 0.4 0 100 0 20 160 140 120 100 80 D=0 D=0.2 20 D=0.1 D=0. 100 0.0001 0.001 Transient Thermal Impedance 35 ZXMD63N03X Refer Note (b) Refer Note ( 100 120 140 160 T - Temperature (°) Derating Curve Refer Note (a) Single Pulse 0.01 0 100 1000 Pulse Width (s) ...

Page 4

... ZXMD63N03X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... VGS 4. 3. 0.1 10 100 0.1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 4.5 5 5.5 6 -100 Normalised R 100 10 1 0.1 10 100 0.2 Source-Drain Diode Forward Voltage 37 ZXMD63N03X 10V VGS 5V 4. 100 V - Drain-Source Voltage (V) DS Output Characteristics RDS(on) VGS=10V ID=1.7A VGS=VDS ID=250uA VGS(th) - 100 150 200 T - Junction Temperature (°C) j and V DS(on) GS(th) v Temperature ...

Page 6

... ZXMD63N03X 500 450 400 350 300 250 200 150 100 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms PROVISIONAL ISSUE A - JULY 1999 TYPICAL CHARACTERISTICS 10 Vgs=0V ID=1.7A 9 f=1Mhz 8 Ciss 7 Coss Crss ...

Page 7

... ZXMD63N03X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc ...

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