ZXM62N02E6 Zetex Semiconductors, ZXM62N02E6 Datasheet - Page 4

• Manufacturer Part Number: ZXM62N02E6
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ZXM62N02E6
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
4
20
0.7
3.2
amb
= 25°C
TYP.
460
150
50
4.0
10.4
16.9
8.0
17.5
8.6
MAX.
1
100
0.1
0.125
6.3
1.5
2.5
0.95
unless otherwise stated).
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=2.2A (refer to
=25°C, I
=25°C, I
=6.0 , R
=20V, V
=10V,I
=15 V, V
=16V,V
= 12V, V
=4.5V, I
=2.7V, I
=0V
=10V, I
S
F
D
=2.2A,
GS
=2.2A,
=1.1A
D
D
D
GS
D
GS
GS
=2.2A
DS
=2.2A
=1.1A
=4.4
=4.5V,
DS
=0V
=0V,
=0V
= V
=0V
GS