ZXM62N02E6 Zetex Semiconductors, ZXM62N02E6 Datasheet

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ZXM62N02E6

Manufacturer Part Number
ZXM62N02E6
Description
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM62N02E6TA
Manufacturer:
ZETEX
Quantity:
22 000
Part Number:
ZXM62N02E6TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXM62N02E6TA
Quantity:
2 870
Part Number:
ZXM62N02E6TC
Manufacturer:
ZETEX
Quantity:
42 000
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JUNE 2004
DEVICE
ZXM62N02E6TA
ZXM62N02E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
2N02
=20V; R
REEL SIZE
(inches)
DS(ON)
13
7
= 0.1
TAPE WIDTH (mm)
8mm embossed
8mm embossed
I
D
=3.2A
1
QUANTITY
PER REEL
3000 units
10000 units
ZXM62N02E6
SOT23-6
Top View

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ZXM62N02E6 Summary of contents

Page 1

... Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM62N02E6TA 7 ZXM62N02E6TC 13 DEVICE MARKING 2N02 ISSUE 1 - JUNE 2004 I =3.2A D TAPE WIDTH (mm) QUANTITY PER REEL 8mm embossed 3000 units 8mm embossed 10000 units 1 ZXM62N02E6 SOT23-6 Top View ...

Page 2

... ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C (a) A Linear Derating Factor Power Dissipation at T =25°C (b) ...

Page 3

... ISSUE 1 - JUNE 2004 CHARACTERISTICS 2 1 100 0 20 120 100 80 D=0 D=0.2 20 D=0.1 D=0. 100 0.0001 0.001 0.01 Transient Thermal Impedance 3 ZXM62N02E6 Refer Note (b) Refer Note ( 100 120 140 160 T - Temperature (°C) Derating Curve Refer Note (a) Single Pulse 0 100 1000 Pulse Width (s) ...

Page 4

... ZXM62N02E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 100 VGS 0.1 10 100 0.1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 3 3.5 4 -100 Normalised RDS(on) and VGS(th) 100 10 1 0.1 10 100 0.2 Source-Drain Diode Forward Voltage 5 ZXM62N02E6 +150 C 5V 4.5V 4V VGS 3.5V 3V 2. Drain-Source Voltage (V) DS Output Characteristics R DS(on) V =4. =2. =250uA D V GS(th) -50 0 ...

Page 6

... ZXM62N02E6 TYPICAL CHARACTERISTICS 900 800 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 Vgs=0V 4.5 f=1Mhz 4 Ciss 3.5 Coss 3 Crss 2.5 2 1 100 0 Gate-Source Voltage v Gate Charge ...

Page 7

... ZXM62N02E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 0.110 E 2.60 3.00 0.102 E1 1.50 1.75 0.059 L 0.10 0.60 0.004 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) ...

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