SI6969DQ Vishay Siliconix, SI6969DQ Datasheet - Page 3

• Manufacturer Part Number: SI6969DQ
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 70828
S-59527—Rev. A, 19-Oct-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
4.5
3.6
2.7
1.8
0.9
0.0
30
24
18
12
6
0
0
0
0
V
I
D
DS
3
= 4.6 A
2
On-Resistance vs. Drain Current
= 6 V
V
6
DS
Q
Output Characteristics
g
6
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
V
4
GS
V
- Drain Current (A)
Gate Charge
12
V
GS
GS
= 5 thru 2,5 V
9
= 1.8 V
= 2.5 V
6
12
18
8
15
V
1.5 V
GS
2 V
1 V
24
= 4.5 V
10
18
30
21
12
4000
3200
2400
1600
800
1.4
1.2
1.0
0.8
0.6
30
24
18
12
6
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
0.5
= 4.6 A
2
V
V
= 4.5 V
DS
GS
T
J
Transfer Characteristics
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
4
25
Capacitance
C
oss
Vishay Siliconix
C
1.5
50
iss
6
T
25_C
C
= - 55_C
75
Si6969DQ
2.0
8
100
www.vishay.com
125_C
2.5
10
125
150
3.0
12
2-3