SI5935DC-T1 Vishay Siliconix, SI5935DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5935DC-T1
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72220
S-31260—Rev. A, 16-Jun-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
0.2
= 3 A
On-Resistance vs. Drain Current
= 10 V
3
V
SD
2
Q
0.4
g
V
- Source-to-Drain Voltage (V)
I
D
GS
V
- Total Gate Charge (nC)
T
GS
J
- Drain Current (A)
3
Gate Charge
= 150_C
= 1.8 V
6
= 2.5 V
0.6
4
0.8
9
5
1.0
V
T
GS
6
J
= 25_C
12
= 4.5 V
1.2
7
1.4
15
8
New Product
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
C
On-Resistance vs. Junction Temperature
D
V
I
rss
D
- 25
= 0.6 A
GS
= 3 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
C
Vishay Siliconix
iss
I
50
D
= 3 A
12
3
75
Si5935DC
100
16
www.vishay.com
4
125
150
20
5
3