SI5513DC Vishay Siliconix, SI5513DC Datasheet - Page 2

• Manufacturer Part Number: SI5513DC
• Description: Complementary 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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2
Si5513DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%,
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
I
I
DS(
DS(on)
t
t
t
t
I
I
I
I
GS(th)
GS(th)
D(
D(on)
V
V
Q
Q
Q
Q
d( ff)
d(off)
d(
d(on)
GSS
GSS
DSS
DSS
g
g
Q
Q
t
t
SD
SD
t
t
t
t
rr
f
fs
gs
gd
r
f
f
g
g
d
)
)
)
V
V
V
DS
I
I
V
D
D
V
DS
I
DS
D
DS
^ −1 A, V
^ −1 A, V
= −10 V, V
^ 1 A, V
I
= 10 V, V
I
F
= − 20 V, V
V
V
V
F
V
V
V
V
= 20 V, V
V
V
V
V
V
DS
10 V V
V
V
= −0.9 A, di/dt = 100 A/ms
V
V
V
GS
GS
V
I
DS
DS
DS
DS
= 0.9 A, di/dt = 100 A/ms
DS
I
S
DD
DS
DS
GS
GS
S
DD
DD
DS
DS
p −5 V, V
= −0.9 A, V
= 0.9 A, V
= V
= −4.5 V, I
= −2.5 V, I
= 0 V V
= 0 V, V
= −10 V, I
= V
= −20 V, V
w 5 V, V
= −10 V, R
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 10 V, R
= 10 V, I
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
P Channel
GEN
GEN
GEN
Test Condition
GS
GS
10 V R
GS
GS
GS
GS
, I
, I
= −4.5 V, I
= 4.5 V, R
= −4.5 V, R
= −4.5 V, R
= 4.5 V, I
D
GS
GS
= 0 V, T
D
= 0 V, T
GS
GS
D
D
GS
= −250 mA
D
D
D
D
GS
GS
4 5 V I
L
L
= 250 mA
GS
L
= "12 V
= "12 V
= 3.1 A
= −2.1 A
= 3.1 A
= −2.1 A
= 2.3 A
= −1.7 A
= 10 W
= 10 W
= 4.5 V
= −4.5 V
= 10 W
= 0 V
= 0 V
= 0 V
= 0 V
10 W
J
D
J
D
g
g
= 70_C
= 70_C
= 3.1 A
g
g
= 6 W
= −2.1 A
= 6 W
= 6 W
2 1 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
−0.6
−10
0.6
10
0.065
0.130
0.215
S-42138—Rev. F, 15-Nov-04
0.115
Typ
−0.8
0.8
0.6
0.9
1.3
0.6
12
13
35
35
19
25
25
40
40
Document Number: 71186
8
5
4
3
9
Max
"100
"100
0.075
0.155
0.134
0.260
−1.5
−1.2
1.5
1.2
−1
−5
18
20
55
55
30
40
15
40
80
80
1
5
6
6
Unit
nA
nA
mA
mA
nC
nC
ns
ns
W
W
V
V
A
A
S
S
V
V
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