SI3850DV Vishay Siliconix, SI3850DV Datasheet

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... Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Document Number: 73853 Revision: 31-Oct-06 Specification Comparison Si3850ADV vs. Si3850DV = 25 °C, unless otherwise noted A Symbol N- P-Ch N- ...

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... P-Ch 1.1 N-Ch 0. P-Ch - 1.0 N-Ch 0. P-Ch 1.10 N-Ch 0. P-Ch 0.28 N-Ch 0. P-Ch 0.26 N-Ch 3 P-Ch 10.5 N- d(on) P- P- d(off) P- P- N-Ch 25 Si3850DV Max Min Typ Max 1.5 0.6 1.5 - 1.5 - 0.6 - 1.5 ± 100 ± 100 ± 100 ± 100 3.0 - 2.0 0.300 0.38 0.500 0.640 0.7 1.0 0.410 0.55 0.750 0.980 1.1 1.3 2.7 1.2 1.2 1.2 - 1.3 - 1.2 1.4 0.8 2.0 1.7 1.10 2.5 0.25 0.5 0.2 0.2 5.3 0.3 1 ...