SI3458DV Vishay Siliconix, SI3458DV Datasheet

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SI3458DV

Manufacturer Part Number
SI3458DV
Description
N-Channel 60-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3458DV
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI3458DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70859
S-61517—Rev. B, 12-Apr-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Single Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
Surface Mounted on FR4 Board.
t
DS
60
60
5 sec.
(V)
3 mm
J
J
a, b
a, b
0.13 @ V
0.10 @ V
= 150 C)
= 150 C)
a
a
r
DS(on)
Parameter
Parameter
Top View
1
2
3
TSOP-6
GS
2.85 mm
GS
a, b
a, b
= 4.5 V
( )
= 10 V
N-Channel 60-V (D-S) MOSFET
6
5
4
I
Steady State
Steady State
New Product
D
T
T
T
T
t
A
A
A
A
(A)
3.2
2.8
= 25 C
= 70 C
= 25 C
= 70 C
5 sec
(3) G
N-Channel MOSFET
(1, 2, 5, 6) D
Symbol
Symbol
T
(4) S
R
R
R
V
V
J
I
I
P
P
, T
DM
thJA
thJA
I
I
AS
thJL
GS
DS
D
D
D
D
stg
Typical
106
35
–55 to 150
www.vishay.com FaxBack 408-970-5600
Limit
1.3
2
3.2
2.5
60
20
15
10
Vishay Siliconix
Maximum
62.5
Si3458DV
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI3458DV Summary of contents

Page 1

... –55 to 150 J stg Symbol Typical t 5 sec R R thJA thJA Steady State 106 Steady State R 35 thJL www.vishay.com FaxBack 408-970-5600 Si3458DV Vishay Siliconix Limit Unit 3.2 2 1.3 C Maximum Unit 62.5 C/W C/W 2-1 ...

Page 2

... Si3458DV Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... 600 500 400 300 200 100 2.0 1.6 1.2 0.8 0 –50 Si3458DV Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si3458DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

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