SUM16N20-125 Vishay Siliconix, SUM16N20-125 Datasheet
SUM16N20-125
Related parts for SUM16N20-125
SUM16N20-125 Summary of contents
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... T = 25_C 125_C 0 25_C 25_C A SUM16N20-125 Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package D PWM Optimized for Fast Switching APPLICATIONS D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D Isolated DC/DC converters - Primary-Side Switch - High Voltage Synchronous Rectifier ...
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... SUM16N20-125 Vishay Siliconix SPECIFICATIONS (T Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Document Number: 72076 S-31273—Rev. C, 16-Jun-03 New Product 55_C C 25_C 125_C iss C oss 120 160 200 SUM16N20-125 Vishay Siliconix Transfer Characteristics 125_C C 5 25_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUM16N20-125 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3 2 2.4 2.0 1.6 1.2 0.8 0.4 0 Junction Temperature (_C) J www.vishay.com 4 New Product 50 75 100 125 150 175 Drain Source Breakdown vs. Junction Temperature 250 240 230 220 210 200 ...
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... Single Pulse 0. Document Number: 72076 S-31273—Rev. C, 16-Jun-03 New Product 100 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM16N20-125 Vishay Siliconix Safe Operating Area 100 Limited by r DS(on 25_C C Single Pulse 0.1 0 ...