IDT7130SA Integrated Device Technology, IDT7130SA Datasheet - Page 11

• Manufacturer Part Number: IDT7130SA
• Description: High Speed 1k X 8 Dual-port Static Sram
• Manufacturer: Integrated Device Technology

ADDRESS
Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)
Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (t
3. t
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the HIGH impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
DATA
ADDRESS
DATA
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
DATA
(Figure 2).
bus for the required t
WR
R/W
is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
OUT
R/W
OE
CE
CE
IN
IN
DW
. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t
t
EW
AS
t
AS
or t
(6)
(6)
WP
(4)
) of CE = V
IL
and R/W = V
t
WZ
(7)
t
AW
t
IL.
AW
t
WC
t
t
WC
WP
t
EW
11
(2)
(2)
Military, Industrial and Commercial Temperature Ranges
t
DW
WP
or (t
t
DW
WZ
+ t
DW
) to allow the I/O drivers to turn off data to be placed on the
t
WR
(3)
t
WR
t
(3)
t
DH
OW
t
DH
t
HZ
(1,5)
(1,5,8)
(7)
t
HZ
(4)
(7)
2689 drw 11
2689 drw 10
WP
.