SI1563EDH Vishay Siliconix, SI1563EDH Datasheet - Page 5

• Manufacturer Part Number: SI1563EDH
• Description: Complementary 20-V (D-S) Low-Threshold MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 71416
S-03943—Rev. B, 21-May-01
0.01
0.01
8
6
4
2
0
0.1
0.1
0
2
1
2
1
10
10
–4
–4
Gate-Current vs. Gate-Source Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
Single Pulse
V
4
GS
– Gate-to-Source Voltage (V)
0.02
0.02
10
–3
8
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
12
–2
_
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
16
10
New Product
–2
10
–1
10,000
1
10
1,000
0.001
0.01
100
–1
0.1
10
1
0
T
Gate Current vs. Gate-Source Voltage
J
= 150_C
3
10
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
GS
DM
JM
– Gate-to-Source Voltage (V)
– T
t
A
1
T
1
6
J
= P
t
= 25_C
2
Vishay Siliconix
DM
Z
thJA
100
thJA
t
t
1
2
Si1563EDH
(t)
9
= 170_C/W
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12
600
10
15
5