SI1405DL Vishay Siliconix, SI1405DL Datasheet - Page 2

• Manufacturer Part Number: SI1405DL
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si1405DL
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
5
4
3
2
1
0
0
b
O S
Parameter
V
1
a
a
R
DS
Output Characteristics
i
a
– Drain-to-Source Voltage (V)
300 s, duty cycle
2
a
a
V
0.5 V
GS
1.5 V
= 5 thru 2 V
3
1 V
2%.
Symbol
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
4
fs
gs
gd
r
f
g
5
New Product
V
V
I
I
V
DS
D
DS
= –4 V, V
I
F
= –6.4 V, V
V
V
V
V
–1 A, V
V
V
V
GS
1 A V
= –0.8 A, di/dt = 100 A/ s
DS
I
4 V V
V
V
DS
GS
GS
DS
DS
S
V
Test Condition
DD
DD
DS
= –0.8 A, V
= –5 V, V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= V
= –10 V, I
= –6.4 V, V
= –4 V, R
= 0 V, V
GEN
GS
GS
4 V R
GS
, I
= –4.5 V, I
= –4.5 V, R
,
D
GS
= 0 V, T
4 5 V I
D
= –250 A
GS
D
D
4 5 V R
D
GS
L
L
GS
= –1.8 A
= –4.5 V
= –1.6 A
= –0.8 A
= –1.8 A
= 10
=
= 0 V
10
= 0 V
D
4.0
3.2
2.4
1.6
0.8
J
8 V
= 85 C
= –1.8 A
G
0
= 6
0
1 8 A
6
V
GS
0.6
Transfer Characteristics
–0.45
Min
–2
– Gate-to-Source Voltage (V)
T
C
= –55 C
1.2
0.100
0.130
0.170
–0.76
Typ
3.8
5.5
0.9
0.9
36
33
30
20
25 C
8
S-01560—Rev. B, 17-Jul-00
Document Number: 71073
Max
0.125
0.160
0.210
–1.1
1.8
7.0
–1
–5
12
55
50
45
40
100
125 C
Unit
nA
nC
ns
V
A
S
V
A
A
C
2.4