SI1402DH Vishay Siliconix, SI1402DH Datasheet - Page 4
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SI1402DH
Manufacturer Part Number
SI1402DH
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI1402DH.pdf
(6 pages)
www.DataSheet4U.com
www.vishay.com
4
Si1402DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.1
0.4
0.2
10
1
0.00
−50
−25
Source-Drain Diode Forward Voltage
T
J
V
= 150_C
0.3
SD
0
− Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
= 250 mA
− Temperature (_C)
25
0.6
50
0.9
T
75
J
= 25_C
100
1.2
0.01
100
0.1
10
1
0.1
125
*V
Safe Operating Area, Junction-to-Case
*r
GS
Limited
1.5
150
I
DS(on)
D(on)
u minimum V
V
New Product
DS
Limited
Single Pulse
T
− Drain-to-Source Voltage (V)
C
1
= 25_C
GS
BV
at which r
DSS
Limited
I
DM
DS(on)
10
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 ms
10 ms
100 ms
10 s, 1 s
dc
I
D
1
V
100
= 3 A
GS
0.1
− Gate-to-Source Voltage (V)
Time (sec)
2
S-50527—Rev. A, 28-Mar-05
1
3
Document Number: 73328
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10
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