SI1302DL Vishay Siliconix, SI1302DL Datasheet - Page 3

no-image

SI1302DL

Manufacturer Part Number
SI1302DL
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1302DL-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY
Quantity:
18 400
Part Number:
SI1302DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
53 726
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1302DL-T1-E3
Quantity:
3 000
Company:
Part Number:
SI1302DL-T1-E3
Quantity:
1 500
Part Number:
SI1302DL-T1-GE3
Manufacturer:
MICROCHIP
Quantity:
1 944
Part Number:
SI1302DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71249
S-02367—Rev. C, 23-Oct-00
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
8
6
4
2
0
1
0.0
0.0
0.0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 0.6 A
0.2
On-Resistance vs. Drain Current
= 15 V
0.2
0.2
V
SD
Q
g
T
– Source-to-Drain Voltage (V)
I
J
0.4
D
– Total Gate Charge (nC)
= 150_C
– Drain Current (A)
Gate Charge
0.4
0.4
0.6
0.6
0.6
0.8
V
V
GS
GS
= 4.5 V
= 10 V
T
0.8
0.8
J
1.0
= 25_C
_
1.0
1.0
1.2
New Product
1.8
1.5
1.2
0.9
0.6
0.3
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 0.6 A
C
= 10 V
2
4
rss
T
V
V
0
J
DS
GS
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
C
Capacitance
4
oss
8
C
iss
I
D
Vishay Siliconix
50
= 0.6 A
12
6
75
Si1302DL
100
www.vishay.com
16
8
125
150
10
20
3

Related parts for SI1302DL